npn silicon planar switching transistor issue 2 ? april 94 features * 40 volt v ceo * fast switching absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6v continuous collector current i c 800 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +175 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 75 v i c =10 m a, i e =0 collector-emitter breakdown voltage v (br)ceo 40 v i c =10ma, i b =0 emitter-base breakdown voltage v (br)ebo 6v i e =10 m a, i c =0 collector cut-off current i cbo 10 10 na m a v cb =60v, i e =0 v cb =60v, i e =0, t amb =150c emitter cut-off current i ebo 10 na v eb =3v, i c =0 collector-emitter cut-off current i cex 10 na v ce =60v, v eb(off) =3v collector-emitter saturation voltage v ce(sat) 0.3 1.0 v v i c =150ma, i b =15ma* i c =500ma, i b =50ma* base-emitter saturation voltage v be(sat) 0.6 1.2 2.0 v v i c =150ma, i b =15ma* i c =500ma, i b =50ma* static forward current transfer ratio h fe 35 50 75 35 100 50 40 300 i c =0.1ma, v ce =10v* i c =1ma, v ce =10v i c =10ma, v ce =10v* i c =10ma, v ce =10v, t amb =-55c i c =150ma, v ce =10v* i c =150ma, v ce =1v* i c =500ma, v ce =10v* *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% e-line to92 compatible c b e MPS2222A 3-66 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. transition frequency f t 300 mhz i c =20ma, v ce =20v f=100mhz output capacitance c obo 8pfv cb =10v, i e =0, f=140khz input capacitance c ibo 25 pf v eb =0.5v, i c =0 f=140khz delay time t d 10 ns v ce =30v, v be(off) =0.5v i c =150ma, i b1 =15ma (see delay test circuit) rise time t r 25 ns storage time t s 225 ns v ce =30v, i c =150ma i b1 = i b2 =15ma (see storage test circuit) fall time t f 60 ns MPS2222A scope: r in > 100 k w c in < 12 pf rise time < 5 ns 0 0.5v 9.9v generator rise time <2ns pulse width (t 1 )<200ns duty cycle = 2% +30v 200 w 619 w delay and rise ? test circuit +30v 1n916 -3v 1k w 200 w scope: r in > 100 k w c in < 12 pf rise time < 5 ns -13.8 v =500 m s =100 m s <5ns +16.2 v 0 duty cycle = 2% storage time and fall time ? test circuit 3-67
npn silicon planar switching transistor issue 2 ? april 94 features * 40 volt v ceo * fast switching absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6v continuous collector current i c 800 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +175 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 75 v i c =10 m a, i e =0 collector-emitter breakdown voltage v (br)ceo 40 v i c =10ma, i b =0 emitter-base breakdown voltage v (br)ebo 6v i e =10 m a, i c =0 collector cut-off current i cbo 10 10 na m a v cb =60v, i e =0 v cb =60v, i e =0, t amb =150c emitter cut-off current i ebo 10 na v eb =3v, i c =0 collector-emitter cut-off current i cex 10 na v ce =60v, v eb(off) =3v collector-emitter saturation voltage v ce(sat) 0.3 1.0 v v i c =150ma, i b =15ma* i c =500ma, i b =50ma* base-emitter saturation voltage v be(sat) 0.6 1.2 2.0 v v i c =150ma, i b =15ma* i c =500ma, i b =50ma* static forward current transfer ratio h fe 35 50 75 35 100 50 40 300 i c =0.1ma, v ce =10v* i c =1ma, v ce =10v i c =10ma, v ce =10v* i c =10ma, v ce =10v, t amb =-55c i c =150ma, v ce =10v* i c =150ma, v ce =1v* i c =500ma, v ce =10v* *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% e-line to92 compatible c b e MPS2222A 3-66 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. transition frequency f t 300 mhz i c =20ma, v ce =20v f=100mhz output capacitance c obo 8pfv cb =10v, i e =0, f=140khz input capacitance c ibo 25 pf v eb =0.5v, i c =0 f=140khz delay time t d 10 ns v ce =30v, v be(off) =0.5v i c =150ma, i b1 =15ma (see delay test circuit) rise time t r 25 ns storage time t s 225 ns v ce =30v, i c =150ma i b1 = i b2 =15ma (see storage test circuit) fall time t f 60 ns MPS2222A scope: r in > 100 k w c in < 12 pf rise time < 5 ns 0 0.5v 9.9v generator rise time <2ns pulse width (t 1 )<200ns duty cycle = 2% +30v 200 w 619 w delay and rise ? test circuit +30v 1n916 -3v 1k w 200 w scope: r in > 100 k w c in < 12 pf rise time < 5 ns -13.8 v =500 m s =100 m s <5ns +16.2 v 0 duty cycle = 2% storage time and fall time ? test circuit 3-67
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